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1

3.3–3.4-$\mu{\rm m}$ Diode Lasers Based on Triple-Layer GaInAsSb Quantum Wells

Liang, Rui, Kipshidze, Gela, Hosoda, Takashi, Shterengas, Leon, Belenky, Gregory

Journal:

IEEE Photonics Technology Letters

Année:

2014

Langue:

english

Fichier:

PDF, 481 KB

english, 2014

2

GaSb-Based Diode Lasers With Asymmetric Separate Confinement Heterostructure

Liang, Rui, Hosoda, Takashi, Kipshidze, Gela, Shterengas, Leon, Belenky, Gregory

Journal:

IEEE Photonics Technology Letters

Année:

2013

Langue:

english

Fichier:

PDF, 909 KB

english, 2013

3

High-Power 2.2-$\mu$m Diode Lasers With Heavily Strained Active Region

Liang, Rui, Chen, Jianfeng, Kipshidze, Gela, Westerfeld, David, Shterengas, Leon, Belenky, Gregory

Journal:

IEEE Photonics Technology Letters

Année:

2011

Langue:

english

Fichier:

PDF, 379 KB

english, 2011

4

[WORLD SCIENTIFIC Selected Papers from the Workshop on Frontiers in Electronics 2013 (WOFE-13) - San Juan, Puerto-Rico (17 – 20 December 2013)] Frontiers in Electronics - Structural and Optical Characteristics of Metamorphic Bulk InAsSb

Lin, Youxi, Wang, Ding, Donetsky, Dmitry, Kipshidze, Gela, Shterengas, Leon, Belenky, Gregory, Sarney, Wendy L., Svensson, Stefan P.

Langue:

english

Fichier:

PDF, 701 KB

english

5

Structural and Optical Characteristics of Metamorphic Bulk

Lin, Youxi, Wang, Ding, Donetsky, Dmitry, Kipshidze, Gela, Shterengas, Leon, Belenky, Gregory, Sarney, Wendy L., Svensson, Stefan P.

Journal:

International Journal of High Speed Electronics and Systems

Année:

2014

Langue:

english

Fichier:

PDF, 427 KB

english, 2014

6

Narrow Ridge $\lambda \approx 3$ - $\mu \text{m}$ Cascade Diode Lasers With Output Power Above 100 mW at Room Temperature

Liang, Rui, Hosoda, Takashi, Shterengas, Leon, Stein, Aaron, Lu, Ming, Kipshidze, Gela, Belenky, Gregory

Journal:

IEEE Photonics Technology Letters

Année:

2015

Langue:

english

Fichier:

PDF, 958 KB

english, 2015

7

Development of Bulk InAsSb Alloys and Barrier Heterostructures for Long-Wave Infrared Detectors

Lin, Youxi, Donetsky, Dmitry, Wang, Ding, Westerfeld, David, Kipshidze, Gela, Shterengas, Leon, Sarney, Wendy L., Svensson, Stefan P., Belenky, Gregory

Journal:

Journal of Electronic Materials

Année:

2015

Langue:

english

Fichier:

PDF, 705 KB

english, 2015

8

Two-Step Narrow Ridge Cascade Diode Lasers Emitting Near $2~\mu$ m

Feng, Tao, Hosoda, Takashi, Shterengas, Leon, Stein, Aaron, Kipshidze, Gela, Belenky, Gregory

Journal:

IEEE Photonics Technology Letters

Année:

2017

Langue:

english

Fichier:

PDF, 649 KB

english, 2017

9

External cavity type-I quantum well cascade diode lasers with a tuning range of 440 nm near 3 μm

Wang, Meng, Hosoda, Takashi, Jiang, Jiang, Shterengas, Leon, Kipshidze, Gela, Stein, Aaron, Feng, Tao, Belenky, Gregory

Journal:

Année:

2018

Langue:

english

Fichier:

PDF, 1.66 MB

english, 2018

10

Passive mode-locking of 3.25 µm GaSb-based cascade diode lasers

Feng, Tao, Shterengas, Leon, Hosoda, Takashi, Belyanin, Alexey, Kipshidze, Gela

Journal:

Année:

2018

Langue:

english

Fichier:

PDF, 4.00 MB

english, 2018

11

[IEEE 2012 IEEE Long Island Systems, Applications and Technology Conference (LISAT) - Farmingdale, NY, USA (2012.05.4-2012.05.4)] 2012 IEEE Long Island Systems, Applications and Technology Conference (LISAT) - CO2 sensor with data logger system

Lee, Taeg Jin, Lee, Oong, Kim, Jongwoo, Shterengas, Leon

Année:

2012

Langue:

english

Fichier:

PDF, 371 KB

english, 2012

12

GaSb-Based Mid-Infrared Single Lateral Mode Lasers Fabricated by Selective Wet Etching Technique with an Etch Stop Layer

Seungyong Jung, Gela Kipshidze, Rui Liang, Sergey Suchalkin, Leon Shterengas, Gregory Belenky

Journal:

Journal of Electronic Materials

Année:

2012

Langue:

english

Fichier:

PDF, 368 KB

english, 2012

13

SPIE Proceedings [SPIE SPIE Defense, Security, and Sensing - Baltimore, Maryland, USA (Monday 29 April 2013)] Infrared Technology and Applications XXXIX - Infrared emitters and photodetectors with InAsSb bulk active region

Wang, Ding, Lin, Youxi, Donetsky, Dmitry, Kipshidze, Gela, Shterengas, Leon, Belenky, Gregory, Svensson, Stefan P., Sarney, Wendy L., Hier, Harry, Andresen, Bjørn F., Fulop, Gabor F., Hanson, Charles

Année:

2013

Langue:

english

Fichier:

PDF, 829 KB

english, 2013

14

Metamorphic InAsSb/AlInAsSb heterostructures for optoelectronic applications

Belenky, Gregory, Wang, Ding, Lin, Youxi, Donetsky, Dmitry, Kipshidze, Gela, Shterengas, Leon, Westerfeld, David, Sarney, Wendy L., Svensson, Stefan P.

Journal:

Applied Physics Letters

Année:

2013

Langue:

english

Fichier:

PDF, 1.46 MB

english, 2013

15

Metamorphic InAsSb-based barrier photodetectors for the long wave infrared region

Wang, Ding, Donetsky, Dmitry, Kipshidze, Gela, Lin, Youxi, Shterengas, Leon, Belenky, Gregory, Sarney, Wendy, Svensson, Stefan

Journal:

Applied Physics Letters

Année:

2013

Langue:

english

Fichier:

PDF, 954 KB

english, 2013

16

Diode lasers with asymmetric waveguide and improved beam properties

Chen, Jianfeng, Kipshidze, Gela, Shterengas, Leon

Journal:

Applied Physics Letters

Année:

2010

Langue:

english

Fichier:

PDF, 546 KB

english, 2010

17

Type-I quantum well cascade diode lasers emitting near 3 μm

Shterengas, Leon, Liang, Rui, Kipshidze, Gela, Hosoda, Takashi, Suchalkin, Sergey, Belenky, Gregory

Journal:

Applied Physics Letters

Année:

2013

Langue:

english

Fichier:

PDF, 879 KB

english, 2013

18

[IEEE 2010 IEEE Long Island Systems, Applications and Technology Conference - Farmingdale, NY, USA (2010.05.7-2010.05.7)] 2010 IEEE Long Island Systems, Applications and Technology Conference - Calculating the efficiency of dye sensitized solar cells with industry based silicon solar cells

Magsi, Komal, Macdonald, Emilia, Shterengas, Leon

Année:

2010

Langue:

english

Fichier:

PDF, 1.21 MB

english, 2010

19

Conduction- and Valence-Band Energies in Bulk InAs1−xSbxand Type

Youxi Lin,Ding Wang,Dmitry Donetsky,Leon Shterengas…

Journal:

Journal of Electronic Materials

Année:

2013

Langue:

english

Fichier:

PDF, 591 KB

english, 2013

20

Cascade type-I quantum well diode lasers emitting 960 mW near 3 μm

Shterengas, Leon, Liang, Rui, Kipshidze, Gela, Hosoda, Takashi, Belenky, Gregory, Bowman, Sherrie S., Tober, Richard L.

Journal:

Applied Physics Letters

Année:

2014

Langue:

english

Fichier:

PDF, 604 KB

english, 2014

21

200 mW type I GaSb-based laser diodes operating at 3 μm: Role of waveguide width

Hosoda, Takashi, Kipshidze, Gela, Shterengas, Leon, Suchalkin, Sergey, Belenky, Gregory

Journal:

Applied Physics Letters

Année:

2009

Langue:

english

Fichier:

PDF, 502 KB

english, 2009

22

GaSb based light emitting diodes with strained InGaAsSb type I quantum well active regions

Suchalkin, Sergey, Jung, Seungyong, Kipshidze, Gela, Shterengas, Leon, Hosoda, Takashi, Westerfeld, David, Snyder, Donald, Belenky, Gregory

Journal:

Applied Physics Letters

Année:

2008

Langue:

english

Fichier:

PDF, 355 KB

english, 2008

23

[IEEE 2014 72nd Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2014.6.22-2014.6.25)] 72nd Device Research Conference - Diffraction limited 3.15 μm cascade diode lasers

Liang, Rui, Shterengas, Leon, Hosoda, Takashi, Stein, Aaron, Lu, Ming, Kipshidze, Gela, Belenky, Gregory

Année:

2014

Langue:

english

Fichier:

PDF, 343 KB

english, 2014

24

[WORLD SCIENTIFIC Selected Papers from the Workshop on Frontiers in Electronics 2013 (WOFE-13) - San Juan, Puerto-Rico (17 – 20 December 2013)] Frontiers in Electronics - Novel Cascade Diode Lasers Based on Type-I Quantum Wells

Liang, Rui, Shterengas, Leon, Kipshidze, Gela, Hosoda, Takashi, Suchalkin, Sergey, Belenky, Gregory

Langue:

english

Fichier:

PDF, 320 KB

english

25

Transport properties of holes in bulk InAsSb and performance of barrier long-wavelength infrared detectors

Lin, Youxi, Wang, Ding, Donetsky, Dmitry, Kipshidze, Gela, Shterengas, Leon, Vorobjev, Leonid E, Belenky, Gregory

Journal:

Semiconductor Science and Technology

Année:

2014

Langue:

english

Fichier:

PDF, 995 KB

english, 2014

26

PROGRESS IN DEVELOPMENT OF ROOM TEMPERATURE CW GASB BASED DIODE LASERS FOR 2-3.5 μM SPECTRAL REGION

HOSODA, TAKASHI, CHEN, JIANFENG, TSVID, GENE, WESTERFELD, DAVID, LIANG, RUI, KIPSHIDZE, GELA, SHTERENGAS, LEON, BELENKY, GREGORY

Journal:

International Journal of High Speed Electronics and Systems

Année:

2011

Langue:

english

Fichier:

PDF, 205 KB

english, 2011

27

The 3.0–3.2 µm wavelength range narrow ridge waveguide Sb-based semiconductor diode lasers operating up to 333 K

Soibel, Alex, Frez, Cliff, Ksendzov, Alexander, Keo, Sam, Forouhar, Siamak, Tsvid, Gene, Kipshidze, Gela, Shterengas, Leon, Belenky, Gregory

Journal:

Semiconductor Science and Technology

Année:

2011

Langue:

english

Fichier:

PDF, 322 KB

english, 2011

28

Diffraction limited 3.15 μ m cascade diode lasers

Liang, Rui, Shterengas, Leon, Hosoda, Takashi, Stein, Aaron, Lu, Ming, Kipshidze, Gela, Belenky, Gregory

Journal:

Semiconductor Science and Technology

Année:

2014

Langue:

english

Fichier:

PDF, 418 KB

english, 2014

29

Advances in Type-I GaSb Based Lasers

Belenky, Gregory, Shterengas, Leon, Donetsky, Dmitry, Kisin, Mikhail, Kipshidze, Gela

Journal:

Japanese Journal of Applied Physics

Année:

2008

Langue:

english

Fichier:

PDF, 117 KB

english, 2008

30

SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2005 - San Jose, CA (Saturday 22 January 2005)] Quantum Sensing and Nanophotonic Devices II - GaSb-based lasers for spectra region 2-4 μm: challenges and limitations

Belenky, Gregory L., Shterengas, Leon, Kim, J.G., Martinelli, Ramon, Suchalkin, Sergey, Kisin, Mikhail V., Razeghi, Manijeh, Brown, Gail J.

Année:

2005

Langue:

english

Fichier:

PDF, 84 KB

english, 2005

31

Novel Cascade Diode Lasers Based on Type-I Quantum Wells

Liang, Rui, Shterengas, Leon, Kipshidze, Gela, Hosoda, Takashi, Suchalkin, Sergey, Belenky, Gregory

Journal:

International Journal of High Speed Electronics and Systems

Année:

2014

Langue:

english

Fichier:

PDF, 194 KB

english, 2014

32

AIP Conference Proceedings [AIP THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012 - Zurich, Switzerland (29 July–3 August 2012)] - Dynamics of charge carrier recombination and capture in laser nanostructures with InGaAsSb/AlGaAsSb quantum wells

Vinnichenko, Maxim Ya., Vorobjev, Leonid E., Firsov, Dmitry A., Mashko, Marina O., Sofronov, Anton N., Shterengas, Leon, Belenky, Gregory

Année:

2013

Langue:

english

Fichier:

PDF, 251 KB

english, 2013

33

Effect of hole transport on performance of infrared type-II superlattice light emitting diodes

Lin, Youxi, Suchalkin, Sergey, Kipshidze, Gela, Hosoda, Takashi, Laikhtman, Boris, Westerfeld, David, Shterengas, Leon, Belenky, Gregory

Journal:

Journal of Applied Physics

Année:

2015

Langue:

english

Fichier:

PDF, 608 KB

english, 2015

34

[OSA CLEO: Science and Innovations - San Jose, California (2013..-..)] CLEO: 2013 - 3 µm GaSb-based Type-I Quantum-well Diode Lasers with Cascade Pumping Scheme

Liang, Rui, Hosoda, Takashi, Kipshidze, Gela, Shterengas, Leon, Belenky, Gregory

Année:

2013

Langue:

english

Fichier:

PDF, 225 KB

english, 2013

35

SPIE Proceedings [SPIE SPIE Defense, Security, and Sensing - Baltimore, Maryland (Monday 23 April 2012)] Infrared Technology and Applications XXXVIII - Unrelaxed bulk InAsSb with novel absorption, carrier transport, and recombination properties for MWIR and LWIR photodetectors

Wang, Ding, Lin, Youxi, Donetsky, Dmitry, Shterengas, Leon, Kipshidze, Gela, Belenky, Gregory, Sarney, Wendy L., Hier, Harry, Svensson, Stefan P., Andresen, Bjørn F., Fulop, Gabor F., Norton, Paul R.

Année:

2012

Langue:

english

Fichier:

PDF, 1.03 MB

english, 2012

36

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, United States (Saturday 13 February 2016)] Novel In-Plane Semiconductor Lasers XV - Type-I QW cascade diode lasers for spectral region above 3 μm

Belyanin, Alexey A., Smowton, Peter M., Shterengas, Leon, Hosoda, Takashi, Wang, Meng, Feng, Tao, Kipshidze, Gela, Belenky, Gregory

Année:

2016

Langue:

english

Fichier:

PDF, 385 KB

english, 2016

37

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, United States (Saturday 13 February 2016)] Novel In-Plane Semiconductor Lasers XV - First demonstration of single-mode distributed feedback type-I GaSb cascade diode laser emitting near 2.9 μm

Belyanin, Alexey A., Smowton, Peter M., Fradet, Mathieu, Hosoda, Takashi, Frez, Clifford, Shterengas, Leon, Sander, Stanley, Forouhar, Siamak, Belenky, Gregory

Année:

2016

Langue:

english

Fichier:

PDF, 1.14 MB

english, 2016

38

SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2004 - San Jose, CA, United States (Monday 26 January 2004)] Novel In-Plane Semiconductor Lasers III - High-power room-temperature continuous wave operation of type-I In(Al)GaAsSb/GaSb diode lasers at wavelengths greater than 2.5 μm

Kim, Jongjin G., Gmachl, Claire F., Bour, David P., Shterengas, Leon, Martinelli, Ramon U., Belenky, Gregory L.

Année:

2004

Langue:

english

Fichier:

PDF, 159 KB

english, 2004

39

SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2008 - San Jose, CA (Saturday 19 January 2008)] Quantum Sensing and Nanophotonic Devices V - Interband GaSb-based laser diodes for spectral regions of 2.3-2.4 μm and 3-3.1 μm with improved room-temperature performance

Belenky, Gregory, Sudharsanan, Rengarajan, Jelen, Christopher, Donetski, Dimitri, Shterengas, Leon, Hosoda, Takashi, Chen, Jianfeng, Kipshidze, Gela, Kisin, Michail, Westerfeld, David

Année:

2008

Langue:

english

Fichier:

PDF, 376 KB

english, 2008

40

Narrow ridge GaSb-based cascade diode lasers fabricated by methane-hydrogen reactive ion etching

Wang, Meng, Hosoda, Takashi, Shterengas, Leon, Kipshidze, Gela, Hwang, David, Belenky, Gregory

Journal:

Electronics Letters

Année:

2016

Langue:

english

Fichier:

PDF, 382 KB

english, 2016

41

Effect of Auger recombination on nonequilibrium charge carrier concentration in InGaAsSb /AlGaAsSb quantum wells

Maxim Ya, Vinnichenko, Makhov, Ivan S., Selivanov, Anatoliy V., Sorokina, Anastasiya M., Vorobjev, Leonid E., Firsov, Dmitry A., Shterengas, Leon, Belenky, Gregory

Journal:

St. Petersburg Polytechnical University Journal: Physics and Mathematics

Année:

2016

Langue:

english

Fichier:

PDF, 640 KB

english, 2016

42

High power cascade diode lasers emitting near 2 μ m

Hosoda, Takashi, Feng, Tao, Shterengas, Leon, Kipshidze, Gela, Belenky, Gregory

Journal:

Applied Physics Letters

Année:

2016

Langue:

english

Fichier:

PDF, 1.08 MB

english, 2016

43

Cascade Pumping of 1.9 - 3.3 µm Type-I Quantum Well GaSb-based Diode Lasers

Shterengas, Leon, Kipshidze, Gela, Hosoda, Takashi, Liang, Rui, Feng, Tao, Wang, Meng, Aaron, Stein, Belenky, Gregory

Journal:

IEEE Journal of Selected Topics in Quantum Electronics

Année:

2017

Langue:

english

Fichier:

PDF, 463 KB

english, 2017

44

[WORLD SCIENTIFIC Proceedings of the Workshop on Frontiers in Electronics 2009 - Rincon, Puerto-Rico (13 – 16 December 2009)] Frontiers in Electronics - BASED DIODE LASERS FOR 2-3.5 μM SPECTRAL REGION

HOSODA, TAKASHI, CHEN, JIANFENG, TSVID, GENE, WESTERFELD, DAVID, LIANG, RUI, KIPSHIDZE, GELA, SHTERENGAS, LEON, BELENKY, GREGORY

Langue:

english

Fichier:

PDF, 198 KB

english

45

The effect of Auger recombination on the nonequilibrium carrier recombination rate in the InGaAsSb/AlGaAsSb quantum wells

Vinnichenko, Maxim, Makhov, Ivan, Balagula, Roman, Firsov, Dmitry, Vorobjev, Leonid, Shterengas, Leon, Belenky, Gregory

Journal:

Superlattices and Microstructures

Année:

2017

Langue:

english

Fichier:

PDF, 593 KB

english, 2017

46

Three stage cascade diode lasers generating 500 mW near 3.2 μ m

Hosoda, Takashi, Wang, Meng, Shterengas, Leon, Kipshidze, Gela, Belenky, Gregory

Journal:

Applied Physics Letters

Année:

2015

Langue:

english

Fichier:

PDF, 865 KB

english, 2015

47

Engineering Dirac materials: metamorphic InAs 1-x Sb x /InAs 1-y Sb y superlattices with ultra-low bandgap

Suchalkin, Sergey, Belenky, Gregory, Ermolaev, Maksim, Moon, Seongphill, Jiang, Yuxuan, Graf, David, Smirnov, Dmitry, Laikhtman, Boris, Shterengas, Leon, Kipshidze, Gela, Svensson, Stefan, Sarney, Wen

Journal:

Année:

2017

Langue:

english

Fichier:

PDF, 1021 KB

english, 2017

48

m Cascade Light Emitting Diodes

Ermolaev, Maksim, Lin, Youxi, Shterengas, Leon, Hosoda, Takashi, Kipshidze, Gela, Suchalkin, Sergey, Belenky, Gregory

Journal:

IEEE Photonics Technology Letters

Année:

2018

Langue:

english

Fichier:

PDF, 964 KB

english, 2018

49

Cascade Type-I Quantum Well GaSb-Based Diode Lasers

Shterengas, Leon, Kipshidze, Gela, Hosoda, Takashi, Wang, Meng, Feng, Tao, Belenky, Gregory

Journal:

Année:

2016

Langue:

english

Fichier:

PDF, 1.88 MB

english, 2016

50

Laterally coupled distributed feedback type-I quantum well cascade diode lasers emitting near 322 μm

Feng, Tao, Hosoda, Takashi, Shterengas, Leon, Kipshidze, Gela, Stein, Aaron, Lu, Ming, Belenky, Gregory

Journal:

Année:

2017

Langue:

english

Fichier:

PDF, 1.58 MB

english, 2017